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| NTMFS4122N Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead Features * Low RDS(on) * Low Inductance SO-8 Package * This is a Pb-Free Device Applications http://onsemi.com ID MAX (Note 1) 23 A * Notebooks, Graphics Cards * DC-DC Converters * Synchronous Rectification MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1 ) Steady State t v10 s Power Dissipation (Note 1) Steady State t v10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, Tstg IS EAS ID TA = 25C TA = 85C TA = 25C PD TA = 25C 5.8 9.1 6.5 0.9 68 -55 to 150 7.0 220 W A C A mJ A Symbol VDSS VGS ID Value 30 $20 14 10 23 2.2 W Unit V V A V(BR)DSS 30 V RDS(on) TYP 4.6 mW @ 10 V 6.3 mW @ 4.5 V D G S MARKING DIAGRAM D 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 S S S G D 4122N AYWWG G D D Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 21 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 4122N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) TL 260 C THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Value 56.3 21.5 141.6 Unit C/W ORDERING INFORMATION Device NTMFS4122NT1G Package SO-8 FL (Pb-Free) SO-8 FL (Pb-Free) Shipping 1500 Tape & Reel NTMFS4122NT3G 5000 Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0264 in sq). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev. 4 Publication Order Number: NTMFS4122N/D NTMFS4122N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage emperature Coefficient T Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 23 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VGS = 0 V, VDS = 24 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA VGS(TH) VGS(TH)/TJ RDS(on) 1.0 6.6 2.5 V mV/C VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A 4.6 6.3 13.2 6.0 8.5 mW Forward Transconductance gFS VDS = 15 V, ID = 10 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 7.0 A TJ = 25C TJ = 125C 0.75 0.6 28 VGS = 0 V, dIS/dt = 100 A/ms, IS = 7.0 A 14 14 23 nC ns 1.0 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RL = 15 W, RG = 3.0 W 20 20 30 31 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 12 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 2310 460 263 20 3.0 6.7 8.1 0.7 W 30 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4122N TYPICAL PERFORMANCE CURVES 24 22 ID, DRAIN CURRENT (AMPS) 20 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 24 3.3 V VGS = 3.4 V to 10 V TJ = 25C 3.2 V ID, DRAIN CURRENT (AMPS) 22 20 18 16 14 12 10 8 6 4 2 0 1 VDS = 30 V 3.1 V 3.0 V TJ = 125C TJ = 25C TJ = -55C 3 2 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 2.8 V 2.6 V 3 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.008 VGS = 10 V 0.007 0.006 0.005 0.004 0.003 TJ = 25C TJ = -55C TJ = 125C 0.008 Figure 2. Transfer Characteristics TJ = 25C 0.007 0.006 0.005 0.004 VGS = 10 V 0.003 0.002 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPS) VGS = 4.5 V 0.002 0.001 0 2 4 6 8 10 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance vs. Drain Current and Gate Voltage 10000 1.8 1.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 ID = 14 A VGS = 10 V VGS = 0 V TJ = 150C 1000 IDSS, LEAKAGE (nA) 100 TJ = 100C 10 -25 0 25 50 75 100 125 150 3 6 9 12 15 18 21 24 27 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMFS4122N TYPICAL PERFORMANCE CURVES 3000 C, CAPACITANCE (pF) 2500 2000 1500 1000 Coss 500 Ciss VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 QT 4 VDS QGS 3 QGD VGS 12 16 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 8 1 ID = 12 A TJ = 25C 5 10 15 20 QG, TOTAL GATE CHARGE (nC) 4 0 25 Crss 0 0 0 5 10 15 20 25 25 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns) 8 VGS = 0 V TJ = 25C 6 100 4 tf td(off) tr 10 1 td(on) 2 10 RG, GATE RESISTANCE (OHMS) 100 0 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 ID, DRAIN CURRENT (AMPS) Figure 10. Diode Forward Voltage vs. Current 10 10 ms 100 ms 1 ms VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 10 ms 1 0.1 dc 0.01 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTMFS4122N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X 0.20 C D 2 D1 6 5 A B 0.20 C 4X E1 2 E c 1 2 3 4 q A1 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ SOLDERING FOOTPRINT* DETAIL A 3X 4X b e/2 1 4 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 1.270 0.750 4X 0.10 0.05 CAB c L 1.000 0.965 1.330 2X K E2 L1 6 5 0.905 4.530 0.475 2X 0.495 M 3.200 G D2 BOTTOM VIEW 4.560 2X 1.530 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTMFS4122N/D |
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